? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c, r gs = 1m 100 v v gsm transient 20 v i d25 t c = 25 c 130 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 300 a i a t c = 25 c65 a e as t c = 25 c 500 m j p d t c = 25 c 360 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c plastic body for 10 seconds 260 c m d mounting torque (to-247)(to-3p) 1.13 / 10 nm/lb.in. weight to-247 6.0 g to-3p 5.5 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 5 a v gs = 0v t j = 150 c 250 a r ds(on) v gs = 10v, i d = 25a , notes 1, 2 9.1 m trenchmv tm power mosfet n-channel enhancement mode avalanche rated ixth130 n10t ixtq130 n10t v dss = 100v i d25 = 130a r ds(on) 9.1m ds99708a(07/08) g = gate d = drain s = source tab = drain features z ultra-low on resistance z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z 175 c operating temperature advantages z easy to mount z space savings z high power density applications z automotive - motor drives - high side switch - 12v battery - abs systems z dc/dc converters and off-line ups z primary- side switch z high current switching applications to-3p (ixtq) to-247 (ixth) s (tab) (tab) g d s g d
ixys reserves the right to change limits, test conditions, and dimensions. ixth130n10t IXTQ130N10T notes: 1. pulse test, t 300 s; duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 55 93 s c iss 5080 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 635 pf c rss 95 pf t d(on) 30 ns t r 47 ns t d(off) 44 ns t f 28 ns q g(on) 104 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 30 nc q gd 29 nc r thjc 0.42 c/w r thch 0.25 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 130 a i sm repetitive, pulse width limited by t jm 350 a v sd i f = 25a, v gs = 0v, note 1 1.0 v t rr 67 ns i rm 4.7 a q rr 160 nc i f = 25a, v gs = 0v -di/dt = 100a/ s v r = 50v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 25a r g = 5 (external) to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 e ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain
? 2008 ixys corporation, all rights reserved ixth130n10t IXTQ130N10T fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v ds - volts i d - amperes v gs = 10v 8v 7v 6v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 280 012345678910 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.00.40.81.21.62.02.42.8 v ds - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 4. r ds(on) normalized to i d = 65a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 130a i d = 65a fig. 5. r ds(on) normalized to i d = 65a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 40 80 120 160 200 240 280 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixth130n10t IXTQ130N10T fig. 7. input admittance 0 30 60 90 120 150 180 210 240 270 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs - volts i d - amperes t j = - 40oc 25oc 150oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110 q g - nanocoulombs v gs - volts v ds = 50v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2008 ixys corporation, all rights reserved ixth130n10t IXTQ130N10T fig. 14. resistive turn-on rise time vs. drain current 22 26 30 34 38 42 46 50 54 58 62 25 30 35 40 45 50 i d - amperes t r - nanoseconds t j = 125oc t j = 25oc r g = 5 v gs = 10v v ds = 50v fig. 15. resistive turn-on switching times vs. gate resistance 20 30 40 50 60 70 80 90 100 110 120 130 4 6 8 101214161820 r g - ohms t r - nanoseconds 20 23 26 29 32 35 38 41 44 47 50 53 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 50a i d = 25a fig. 16. resistive turn-off switching times vs. junction temperature 26 28 30 32 34 36 38 40 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 40 44 48 52 56 60 64 68 t d(off) - nanoseconds i d = 25a i d = 50a t f t d(off) - - - - r g = 5 , v gs = 10v v ds = 50v fig. 17. resistive turn-off switching times vs. drain current 24 26 28 30 32 34 36 38 40 25 30 35 40 45 50 i d - amperes t f - nanoseconds 38 42 46 50 54 58 62 66 70 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 , v gs = 10v v ds = 50v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 25 30 35 40 45 50 55 60 65 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 v gs = 10v v ds = 50v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 30 40 50 60 70 80 90 100 4 6 8 101214161820 r g - ohms t f - nanoseconds 30 50 70 90 110 130 150 170 t d(off) - nanoseconds i d = 50a i d = 25a 25a < i d < 50a t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v ixys ref: t_130n10t(v3)07-29-08-a
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